NDS9400A Fairchild Semiconductor, NDS9400A Datasheet - Page 5

• Manufacturer Part Number: NDS9400A
• Description: MOSFET P-CH 30V 3.4A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9400A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 10V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 250mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.6V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS9400ATR

Typical Electrical Characteristics
Figure 11. Transconductance Variation with Drain
1 0 0 0
8 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1.08
1.06
1.04
1.02
0.98
0.96
0.94
6
5
4
3
2
1
0
5 0
1.1
Figure 9. Capacitance Characteristics.
Figure 7. Breakdown Voltage Variation with
0
1
0.1
-50
Current and Temperature.
V
DS
= -15V
I
Temperature.
D
0.2
-25
f = 1 MHz
V
= -250µA
GS
-2
= 0V
-V
DS
T
0
J
0.5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
I
D
25
, DRAIN CURRENT (A)
-4
1
50
T
2
J
= -55°C
-6
75
25°C
5
(continued)
100
125°C
1 0
-8
125
C iss
C oss
C rss
150
3 0
-10
0.001
10
0.01
8
6
4
2
0
0.5
0.1
Figure 10. Gate Charge Characteristics.
1 0
Figure 8. Body Diode Forward Voltage
0
5
1
0.2
I
D
V
Variation with Current and Temperature
= -3.4A
GS
T = 125°C
J
2
= 0V
0.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q
4
0.6
g
, GATE CHARGE (nC)
25°C
0.8
6
V
DS
-55°C
= -10V
1
8
1.2
10
-20V
NDS9400A.SAM
-15V
.
1.4
12