FDM3622 Fairchild Semiconductor, FDM3622 Datasheet
FDM3622
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FDM3622TR
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FDM3622 Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDM3622 FDM3622 ©2006 Fairchild Semiconductor Corporation FDM3622 Rev.B ® MOSFET General Description This N-Channel MOSFET is produced using Fairchild = 4.4A D Semiconductor's advanced PowerTrench = 3.8A D been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance ...
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... Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDM3622 Rev 25°C unless otherwise noted J Test Conditions I = 250μ 80V, V ...
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... V , GATE TO SOURCE VOLTAGE (V) GS Figure 3. On-Resistance vs Gate to Source Voltage 50V GATE CHARGE (nC) g Figure 5. Gate Charge Characteristics FDM3622 Rev 25°C unless otherwise noted J PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 4. 4.5V GS 2.0 2.5 3.0 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ...
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... T , AMBIENT TEMPERATURE ( A Figure 9. Normalized Power dissipation vs Ambient Temperature 1.2 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold voltage vs Junction Temperature FDM3622 Rev 25°C unless otherwise noted 100us 1ms 10ms 100ms 100 400 100 125 150 o C) Figure 10. Maximum Continuous Drain Current 1 ...
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... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 135 C/W θ FDM3622 Rev 25°C unless otherwise noted J SINGLE PULSE 135 C/W θ PULSE WIDTH (s) Figure 13. Peak Current Capability - RECTANGULAR PULSE DURATION(s) Figure 14. Transient Thermal Response Curve ...
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... FDM3622 Rev.B 6 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDM3622 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...