FDM3622 Fairchild Semiconductor, FDM3622 Datasheet - Page 3

• Manufacturer Part Number: FDM3622
• Description: MOSFET N-CH 100V 4.4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM3622

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM3622; FDM3622TR

FDM3622 Rev.B
Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
Figure 5.
80
70
60
50
40
Figure 1.
Figure 3. On-Resistance vs Gate to
0
0
4
V
DD
I
0.5
D
= 50V
= 0.2A
V
V
3
GS
DS
Gate Charge Characteristics
V
On-Region Characteristics
Source Voltage
GS
, DRAIN TO SOURCE VOLTAGE (V)
= 10V
, GATE TO SOURCE VOLTAGE (V)
Q
1.0
I
D
g
, GATE CHARGE (nC)
= 4.4A
6
6
1.5
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
T
A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
T
= 25
WAVEFORMS IN
DESCENDING ORDER:
J
9
= 25°C unless otherwise noted
o
C
2.0
I
I
D
D
8
= 4.4A
= 1A
V
V
V
GS
GS
GS
12
= 4.5V
= 4.7V
2.5
= 5V
3.0
10
15
3
1200
1000
100
10
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
3.0
0.1
Figure 2.
-80
Figure 4. Transfer Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
DD
Figure 6. Capacitance vs Drain
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
C
GS
OSS
= 15V
C
RSS
= 0V, f = 1MHz
vs Junction Temperature
3.5
≅ C
-40
V
T
V
= C
J
DS
GS
DS
Normalized On-Resistance
T
= 25
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
GD
J
, GATE TO SOURCE VOLTAGE (V)
+ C
, JUNCTION TEMPERATURE (
T
J
o
C
4.0
= 150
GD
1
0
o
C
4.5
40
C
ISS
5.0
10
V
80
GS
= C
T
J
= 10V, I
GS
= -55
o
C)
+ C
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120
o
5.5
C
GD
D
= 4.4A
160
100
6.0