FDM3622 Fairchild Semiconductor, FDM3622 Datasheet - Page 4

• Manufacturer Part Number: FDM3622
• Description: MOSFET N-CH 100V 4.4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDM3622

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDM3622; FDM3622TR

FDM3622 Rev.B
Typical Characteristics
Figure 11.
0.01
1.2
1.0
0.8
0.6
0.4
0.2
Figure 9. Normalized Power dissipation
100
0.1
1.2
1.0
0.8
0.6
0
10
1
0
0.1
-80
r
D
SINGLE PULSE
T
R
T
S(on)
J
A
Figure 7.
θ
JA
= MAX RATED
= 25
Normalized Gate Threshold voltage
vs Junction Temperature
= 135
LIMITED
vs Ambient Temperature
25
o
V DS , DRAIN to SOURCE VOLTAGE (V)
C
-40
o
C/W
T
T
A
J
Operating Area
, JUNCTION TEMPERATURE (
, AMBIENT TEMPERATURE (
1
Forward Bias Safe
50
0
75
40
10
T
J
V
= 25°C unless otherwise noted
GS
100
80
= V
DS
o
o
C)
, I
C)
D
120
125
100
= 250μA
100ms
1s
DC
10ms
1ms
100us
400
160
150
4
Figure 12. Normalized Drain to Source Breakdown
Figure 10. Maximum Continuous Drain Current
10
20
6
4
2
0
1
1.2
1.1
1.0
0.9
0.001
25
-80
If R = 0
t
If R ≠ 0
t
Figure 8.
AV
AV
Voltage vs Junction Temperature
I
= (L)(I
= (L/R)ln[(I
D
= 250μA
vs Ambient Temperature
STARTING T
0.01
50
AS
-40
Switching Capability
V
T
)/(1.3*RATED BV
A
GS
T
t
AV
, AMBIENT TEMPERATURE (
J
AS
Uncalamped Inductive
, JUNCTION TEMPERATURE (
= 10V
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
0
J
0.1
75
= 150
o
DSS
C
40
- V
100
STARTING T
1
DD
DSS
)
80
- V
DD
o
C)
) +1]
o
125
10
C)
www.fairchildsemi.com
J
= 25
120
o
C
100
150
160