FDPF3860T Fairchild Semiconductor, FDPF3860T Datasheet - Page 3

• Manufacturer Part Number: FDPF3860T
• Description: MOSFET N-CH 100V 20A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDPF3860T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 38.2 mOhm @ 5.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 33.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0382 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 33800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDPF3860T Rev. A
Typical Performance Characteristics
2000
1500
1000
0.14
0.12
0.10
0.08
0.06
0.04
0.02
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
100
200
500
Figure 1. On-Region Characteristics
10
1
0
0.1
0.1
0
V
GS
=
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
Drain Current and Gate Voltage
V
DS
DS
C
25
C
C
, Drain-Source Voltage [V]
,Drain-Source Voltage[V]
rss
iss
oss
I
D
, Drain Current [A]
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
V
GS
50
1
= 10V
*Notes:
1. 250
2. T
*Note: T
C
= 25
µ
(
C ds = shorted
s Pulse Test
V
75
*Note:
GS
o
1. V
2. f = 1MHz
C
10
J
= 20V
= 25
GS
= 0V
o
C
)
100
10
30
3
200
100
200
100
10
10
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1
8
6
4
2
0
1
0.0
4
0
V
SD
5
, Body Diode Forward Voltage [V]
Q
V
Variation vs. Source Current
and Temperature
5
GS
150
g
0.4
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
o
V
V
V
C
DS
DS
DS
10
150
= 80V
= 50V
= 25V
o
C
6
25
*Notes:
-55
0.8
o
15
C
1. V
2. 250
o
*Notes:
1. V
2. 250
C
DS
*Note: I
25
GS
µ
= 20V
o
s Pulse Test
µ
C
7
= 0V
s Pulse Test
20
D
1.2
= 5.9A
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25
8
1.4