This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... C = shorted iss oss rss gd 6000 C iss C oss 3000 C rss Drain-Source Voltage [V] DS FDP2710 Rev. A1 Figure 2. Transfer Characteristics 250 100 10 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 150 100 10 = 20V Note : 100 125 150 Figure 6. Gate Charge Characteristics Note: 1 ...
... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP2710 Rev. A1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...