BSS138 Fairchild Semiconductor, BSS138 Datasheet
BSS138
Manufacturer Part Number
BSS138
Description
MOSFET N-CH 50V 220MA SOT-23
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.BSS138.pdf
(5 pages)
Specifications of BSS138
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 220mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
2.4nC @ 10V
Input Capacitance (ciss) @ Vds
27pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
3.5Ohm
Drain-source On-volt
50V
Gate-source Voltage (max)
±20V
Drain Current (max)
220mA
Power Dissipation
360mW
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.22 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
220mA
Drain Source Voltage Vds
50V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
360mW
No. Of Pins
3
Gate-source Voltage
20V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS138TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSS138
Manufacturer:
FSC
Quantity:
15 000
Company:
Part Number:
BSS138
Manufacturer:
FAIRCHIL
Quantity:
15
Part Number:
BSS138
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
BSS138 E6327
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
BSS138(G9-49)
Manufacturer:
SONY
Quantity:
1 830
Part Number:
BSS138(G9-49)
Manufacturer:
NS/国半
Quantity:
20 000
Part Number:
BSS138-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
BSS138-7-01-F
Manufacturer:
DIODES
Quantity:
2 800
Company:
Part Number:
BSS138-7-01-F
Manufacturer:
SANKEN
Quantity:
4 122
Part Number:
BSS138-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
, T
JA
Device Marking
STG
N-Channel enhancement mode field effect
SOT-23
SS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
D
– Continuous
– Pulsed
G
BSS138
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
0.22 A, 50 V. R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
R
Tape width
G
DS(ON)
DS(ON)
Ratings
55 to +150
8mm
0.22
0.88
0.36
300
350
2.8
= 6.0 @ V
50
= 3.5 @ V
20
D
S
October 2005
GS
GS
= 4.5 V
= 10 V
3000 units
Quantity
BSS138 Rev C(W)
DS(ON)
mW/ C
Units
C/W
W
V
V
A
C
C
Related parts for BSS138
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
BSS138 Summary of contents
Page 1
... Compact industry standard SOT-23 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size Tape width 7’’ October 2005 = 3 DS(ON 6 4.5 V DS(ON) GS DS(ON Ratings Units 0.22 A 0.88 0.36 W mW +150 C 300 C 350 C/W Quantity 8mm 3000 units BSS138 Rev C(W) ...
Page 2
... S is determined by the user's board design. CA 2.0% Min Typ Max Units 100 nA 100 nA 0.8 1.3 1.5 V –2 mV/ C 0.7 3.5 1.0 6.0 = 125 C 1.1 5.8 0.2 A 0. 1.7 2.4 nC 0.1 nC 0.4 nC 0.22 A 0.8 1.4 V (Note 2) BSS138 Rev C(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10V 0.2 0.4 0.6 0 DRAIN CURRENT ( 110mA 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD BSS138 Rev C( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 350°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 350 C/W JA P(pk ( Duty Cycle 100 1000 BSS138 Rev C(W) 50 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...