MOSFET N-CH 50V 220MA SOT-23

BSS138

Manufacturer Part NumberBSS138
DescriptionMOSFET N-CH 50V 220MA SOT-23
ManufacturerFairchild Semiconductor
TypePower MOSFET
BSS138 datasheet
Product Change Notification
 


Specifications of BSS138

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 220mA, 10VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C220mAVgs(th) (max) @ Id1.5V @ 1mA
Gate Charge (qg) @ Vgs2.4nC @ 10VInput Capacitance (ciss) @ Vds27pF @ 25V
Power - Max360mWMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Number Of Elements1
PolarityNChannel ModeEnhancement
Drain-source On-res3.5OhmDrain-source On-volt50V
Gate-source Voltage (max)±20VDrain Current (max)220mA
Power Dissipation360mWOutput Power (max)Not RequiredW
Frequency (max)Not RequiredMHzNoise FigureNot RequireddB
Power GainNot RequireddBDrain EfficiencyNot Required%
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingSurface MountPin Count3
Package TypeSOT-23ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)3.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)0.5 SDrain-source Breakdown Voltage50 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current0.22 A
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CContinuous Drain Current Id220mA
Drain Source Voltage Vds50VOn Resistance Rds(on)3.5ohm
Rds(on) Test Voltage Vgs10VPower Dissipation Pd360mW
No. Of Pins3Gate-source Voltage20V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesBSS138TR  
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BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
G
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
Maximum Power Dissipation
P
D
Derate Above 25 C
T
, T
Operating and Storage Junction Temperature Range
J
STG
Maximum Lead Temperature for Soldering
T
L
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
JA
Package Marking and Ordering Information
Device Marking
Device
SS
BSS138
2005 Fairchild Semiconductor Corporation
Features
0.22 A, 50 V. R
R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
S
G
o
T
=25
C unless otherwise noted
A
(Note 1)
(Note 1)
(Note 1)
Reel Size
Tape width
7’’
October 2005
= 3.5 @ V
= 10 V
DS(ON)
GS
= 6.0 @ V
= 4.5 V
DS(ON)
GS
DS(ON)
D
S
Ratings
Units
50
V
V
20
0.22
A
0.88
0.36
W
mW/ C
2.8
55 to +150
C
300
C
350
C/W
Quantity
8mm
3000 units
BSS138 Rev C(W)

BSS138 Summary of contents

  • Page 1

    ... Compact industry standard SOT-23 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size Tape width 7’’ October 2005 = 3 DS(ON 6 4.5 V DS(ON) GS DS(ON Ratings Units 0.22 A 0.88 0.36 W mW +150 C 300 C 350 C/W Quantity 8mm 3000 units BSS138 Rev C(W) ...

  • Page 2

    ... S is determined by the user's board design. CA 2.0% Min Typ Max Units 100 nA 100 nA 0.8 1.3 1.5 V –2 mV/ C 0.7 3.5 1.0 6.0 = 125 C 1.1 5.8 0.2 A 0. 1.7 2.4 nC 0.1 nC 0.4 nC 0.22 A 0.8 1.4 V (Note 2) BSS138 Rev C(W) ...

  • Page 3

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V 3.0V 3.5V 4.0V 4.5V 6.0V 10V 0.2 0.4 0.6 0 DRAIN CURRENT ( 110mA 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD BSS138 Rev C( 1.2 ...

  • Page 4

    ... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 350°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 350 C/W JA P(pk ( Duty Cycle 100 1000 BSS138 Rev C(W) 50 ...

  • Page 5

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...