BSS138_L99Z Fairchild Semiconductor, BSS138_L99Z Datasheet
BSS138_L99Z
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BSS138_L99Z Summary of contents
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... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SS BSS138 2005 Fairchild Semiconductor Corporation Features 0. High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...
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Typical Characteristics 10V 6.0V 4.5V GS 3.5V 0.8 3.0V 0.6 0.4 0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 220mA D 1 ...
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Typical Characteristics 220mA 0.2 0.4 0.6 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 0 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...