BSS138_L99Z Fairchild Semiconductor, BSS138_L99Z Datasheet - Page 4

• Manufacturer Part Number: BSS138_L99Z
• Description: MOSFET N-CH 50V 220MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS138_L99Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 27pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.001
0.01
0.1
Figure 9. Maximum Safe Operating Area.
0.001
10
10
1
Figure 7. Gate Charge Characteristics.
0.01
8
6
4
2
0
0.1
0.1
0
0.0001
1
I
D
R
SINGLE PULSE
R
= 220mA
DS(ON)
0.2
JA
V
T
GS
A
D = 0.5
= 350
= 25
LIMIT
= 10V
0.2
0.1
0.05
0.4
0.02
o
o
C
C/W
V
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
0.6
Q
1
SINGLE PULSE
0.001
g
, GATE CHARGE (nC)
0.8
Figure 11. Transient Thermal Response Curve.
1
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
V
DC
DS
= 8V
1s
10
1.2
100ms
0.01
10ms
1.4
30V
1ms
1.6
100 s
25V
100
1.8
0.1
t
1
, TIME (sec)
100
80
60
40
20
5
4
3
2
1
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
1
Figure 10. Single Pulse Maximum
C
OSS
0.01
10
C
V
ISS
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
20
t
1
, TIME (sec)
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
30
JA
(t) = r(t) * R
A
t
= 350
1
= P * R
10
t
100
2
o
C/W
SINGLE PULSE
R
JA
JA
1
40
T
JA
100
(t)
/ t
A
= 350°C/W
= 25°C
2
BSS138 Rev C(W)
f = 1 MHz
V
GS
= 0 V
1000
1000
50