FDG316P Fairchild Semiconductor, FDG316P Datasheet

MOSFET P-CH 30V 1.6A SC70-6

FDG316P

Manufacturer Part Number
FDG316P
Description
MOSFET P-CH 30V 1.6A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG316P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
190 mOhm @ 1.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
165pF @ 15V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.6 A
Power Dissipation
0.75 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
FDG316P
Manufacturer:
FAIRCHILD
Quantity:
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Part Number:
FDG316P
Manufacturer:
FAIRCHILD
Quantity:
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2001 Fairchild Semiconductor Corporation
FDG316P
P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
DC/DC converter
Load switch
Power Management
, T
JA
Device Marking
stg
SC70-6
.
36
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Tem perature Range
Therm al Resistance, Junction-to-Am bient
D
D
S
D
- Continuous
- Pulsed
D
G
Parameter
FDG316P
Device
T
A
= 25°C unless otherwise noted
Reel Size
Features
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1b)
-1.6 A, -30 V. R
Low gate charge (3.5nC typical).
High performance trench technology for extremely low
Compact industry standard SC70-6 surface mount
package.
R
DS(ON)
.
2
1
3
3
R
DS(ON)
Tape W idth
DS(ON)
-55 to +150
Ratings
8m m
= 0.19
= 0.30
0.75
0.48
-1.6
260
-30
-6
20
@ V
@ V
6
4
5
GS
GS
December 2001
= -4.5 V.
= -10 V
3000 units
Quantity
Units
C/W
FDG316P Rev. D
W
V
V
A
C

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FDG316P Summary of contents

Page 1

... Compact industry standard SC70-6 surface mount package 25°C unless otherwise noted A Parameter (Note 1a) (Note 1a) (Note 1b) (Note 1b) Device Reel Size FDG316P 7’’ December 2001 = 0. -10 V DS(ON 0. -4.5 V. DS(ON Ratings Units - -1 0.75 W 0.48 -55 to +150 C C/W 260 Tape W idth Quantity 8m m 3000 units FDG316P Rev. D ...

Page 2

... -1.6 A,T =125 - 1.0 MHz GEN -0.42 A (Note determined by the user's board design. CA Min Typ Max Units -30 V -34 mV 100 nA -100 3.5 mV/ C 0.16 0.19 0.22 0.31 0.23 0. 165 3 0.6 nC 0.8 nC -0.42 A 0.75 -1.2 V FDG316P Rev. D ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current = -4.0V -4.5V -5.0V -6.0V -7.0V -8.0V -10V DIRAIN CURRENT ( -0. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. FDG316P Rev 1.6 ...

Page 4

... Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 260 C 0.01 0 100 SINGLE PULSE TIME (SEC) Power Dissipation. R ( =260°C/W JA P(pk ( Duty Cycle 100 FDG316P Rev 1000 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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