FDG316P Fairchild Semiconductor, FDG316P Datasheet - Page 4

• Manufacturer Part Number: FDG316P
• Description: MOSFET P-CH 30V 1.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG316P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 0.75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.01
8
6
4
2
0
0.1
10
0
1
Figure 9. Maximum Safe Operating Area.
Figure 7. Gate-Charge Characteristics.
0.1
I
D
R
= -1.6A
DS(ON)
0.005
SINGLE PULSE
R
0.05
0.01
0.5
0.5
0.1
0.0001
V
JA
T
1
GS
A
LIMIT
= 260
= 25
= -10V
D = 0.5
o
o
-V
0.2
C
1
C/W
0.1
DS
0.05
0.01
Q
, DRAIN-SOURCE VOLTAGE (V)
g
0.02
, GATE CHARGE (nC)
1
Single Pulse
1.5
0.001
DC
V
DS
10s
2
= 5V
Figure 11. Transient Thermal Response Curve.
1s
100ms
10
(continued)
2.5
10ms
15V
1ms
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.01
10V
3
3.5
100
0.1
t , TIME (sec)
1
250
200
150
100
30
24
18
12
0.0001
50
6
0
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
0.001
5
1
-V
Power Dissipation.
DS
0.01
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
10
0.1
P(pk)
T - T
Duty Cycle, D = t / t
10
15
J
R
R
C
C
JA
t
C
1
A
1
OSS
RSS
ISS
(t) = r(t) * R
JA
t
= P * R
2
=260°C/W
20
10
SINGLE PULSE
JA
R
1
JA
(t)
V
T
f = 1MHz
JA
= 260
GS
A
100
2
= 25
25
100
= 0 V
o
o
C
C/W
FDG316P Rev. D
300
1000
30