FDG316P Fairchild Semiconductor, FDG316P Datasheet - Page 3

• Manufacturer Part Number: FDG316P
• Description: MOSFET P-CH 30V 1.6A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG316P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 190 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 15V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.6 A
• Power Dissipation: 0.75 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
10
8
6
4
2
0
8
6
4
2
0
1.6
1.4
1.2
0.8
0.6
0
0
1
-50
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
DS
Figure 3. On-Resistance Variation
V
I
= -5V
D
GS
= -1.6A
-25
= -10V
-7.0V
-8.0V
V
1
GS
-V
-V
2
= -10V
GS
T
with Temperature.
DS
0
, GATE TO SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
-6V
25
2
T
-5.0V
A
= -55
4
50
-4.5V
o
C 25
3
75
o
-4.0V
C
125
100
o
C)
6
-3.5V
o
C
-3.0V
4
-2.5V
125
150
5
8
0.6
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
0
0.01
1.8
1.6
1.4
1.2
0.8
0.1
2
10
2
1
1
with Drain Current and Gate Voltage.
0
0
Figure 6. Body Diode Forward Voltage
Figure 2. On-Resistance Variation
Figure 4. On-Resistance Variation
V
GS
V
Variation with Source Current
with Gate-to-Source Voltage.
GS
= 0V
0.2
= -4.0V
-V
T
-V
2
A
SD
4
GS
= 125
, BODY DIODE FORWARD VOLTAGE (V)
and Temperature.
-4.5V
0.4
, GATE TO SOURCE VOLTAGE (V)
-5.0V
o
-I
C
D
, DIRAIN CURRENT (A)
0.6
-6.0V
4
25
o
C
6
0.8
-7.0V
T
T
-55
A
A
= 125
= 25
o
C
6
-8.0V
o
1
C
o
C
-10V
8
1.2
8
I
D
= -0.8A
1.4
FDG316P Rev. D
1.6
10
10