FDPF51N25 Fairchild Semiconductor, FDPF51N25 Datasheet - Page 4

MOSFET N-CH 250V 51A TO-220F

FDPF51N25

Manufacturer Part Number
FDPF51N25
Description
MOSFET N-CH 250V 51A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF51N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 25.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
3410pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Forward Transconductance Gfs (max / Min)
43 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDP51N25 / FDPF51N25 Rev. B
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
60
50
40
30
20
10
10
10
10
10
10
0
-100
25
-1
-2
2
1
0
10
0
vs. Temperature
vs. Case Temperature
for FDP51N25
Operation in This Area
is Limited by R
-50
50
T
T
V
C
J
, Junction Temperature [
, Case Temperature [
DS(on)
DS
0
, Drain-Source Voltage [V]
75
10
1
50
100
100 ms
o
C]
100
10 ms
DC
o
* Notes :
C]
1 ms
125
1. T
2. T
3. Single Pulse
* Notes :
1. V
2. I
C
J
10
= 150
= 25
100
2
D
GS
= 250
150
= 0 V
o
μ
C
o
C
s
10
μ
A
μ
150
s
200
(Continued)
4
Figure 8. On-Resistance Variation
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
-1
-2
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
Operation in This Area
is Limited by R
vs. Temperature
for FDPF51N25
-50
DS(on)
V
DS
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
10
0
1
DC
100 ms
50
10 ms
* Notes :
1 ms
1. T
2. T
3. Single Pulse
C
J
100
= 150
= 25
100
o
C]
o
C
o
10
C
10
μ
s
2
μ
* Notes :
s
1. V
2. I
www.fairchildsemi.com
150
D
GS
= 25.5 A
= 10 V
200

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