MOSFET N-CH 100V 220MA TO92

BSS100

Manufacturer Part NumberBSS100
DescriptionMOSFET N-CH 100V 220MA TO92
ManufacturerFairchild Semiconductor
BSS100 datasheet
 


Specifications of BSS100

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs6 Ohm @ 220mA, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C220mAVgs(th) (max) @ Id2V @ 1mA
Gate Charge (qg) @ Vgs2nC @ 10VInput Capacitance (ciss) @ Vds60pF @ 25V
Power - Max630mWMounting TypeThrough Hole
Package / CaseTO-92-3 (Standard Body), TO-226Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
G
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
Maximum Power Dissipation
P
D
Derate Above 25 C
T
, T
Operating and Storage Junction Temperature Range
J
STG
Maximum Lead Temperature for Soldering
T
L
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
JA
Package Marking and Ordering Information
Device Marking
Device
SA
BSS123
2003 Fairchild Semiconductor Corporation
Features
0.17 A, 100 V. R
R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
S
G
o
T
=25
C unless otherwise noted
A
(Note 1)
(Note 1)
(Note 1)
Reel Size
Tape width
7’’
June 2003
= 6 @ V
= 10 V
DS(ON)
GS
= 10 @ V
= 4.5 V
DS(ON)
GS
DS(ON)
D
S
Ratings
Units
100
V
20
V
0.17
A
0.68
0.36
W
mW/ C
2.8
55 to +150
C
300
350
C/W
Quantity
8mm
3000 units
BSS123 Rev G(W)

BSS100 Summary of contents

  • Page 1

    ... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SA BSS123 2003 Fairchild Semiconductor Corporation Features 0.17 A, 100 High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...

  • Page 3

    Typical Characteristics 10V GS 3.5V 6.0V 0.8 4.5V 3.0V 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 170mA ...

  • Page 4

    Typical Characteristics 0.17A 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1ms 10ms 100ms 0.1 1s 10s DC ...

  • Page 5

    CROSSVOLT â â â â â Rev. I2 ...