BSS100 Fairchild Semiconductor, BSS100 Datasheet

BSS100

Manufacturer Part Number

BSS100

Description

MOSFET N-CH 100V 220MA TO92

Manufacturer

Fairchild Semiconductor

Datasheet

1.BSS123_D87Z.pdf (5 pages)

Specifications of BSS100

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

6 Ohm @ 220mA, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

220mA

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

2nC @ 10V

Input Capacitance (ciss) @ Vds

60pF @ 25V

Power - Max

630mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSS100

Manufacturer:

INFINEON

Quantity:

1 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSS100

Manufacturer:

FAIRCHILD

Quantity:

8 600

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BSS100

Manufacturer:

NXP

Quantity:

4 240

Current page: 1 of 5
Download datasheet (146Kb)

BSS123

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

These

transistors are produced using Fairchild’s proprietary,

high cell density, DMOS technology. These products

have been designed to minimize on-state resistance

while provide rugged, reliable, and fast switching

performance.These products are particularly suited for

low voltage, low current applications such as small

servo motor control, power MOSFET gate drivers, and

other switching applications.

2003 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

, T

Device Marking

STG

N-Channel enhancement mode field effect

SOT-23

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Maximum Power Dissipation

Derate Above 25 C

Operating and Storage Junction Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/16” from Case for 10 Seconds

Thermal Resistance, Junction-to-Ambient

– Continuous

– Pulsed

BSS123

Device

Parameter

=25

C unless otherwise noted

Reel Size

7’’

(Note 1)

Features

0.17 A, 100 V. R

High density cell design for extremely low R

Rugged and Reliable

Compact industry standard SOT-23 surface mount

package

Tape width

DS(ON)

Ratings

55 to +150

8mm

0.17

0.68

0.36

100

300

350

2.8

= 6 @ V

= 10 @ V

= 10 V

= 4.5 V

June 2003

3000 units

Quantity

BSS123 Rev G(W)

DS(ON)

mW/ C

Units

C/W

Related parts for BSS100

BSS100 Summary of contents

Page 1

... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SA BSS123 2003 Fairchild Semiconductor Corporation Features 0.17 A, 100 High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...

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BSS100 Fairchild Semiconductor, BSS100 Datasheet

BSS100

Specifications of BSS100

Available stocks

Related parts for BSS100

BSS100 Summary of contents

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