BSS100 Fairchild Semiconductor, BSS100 Datasheet
BSS100
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BSS100 Summary of contents
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... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SA BSS123 2003 Fairchild Semiconductor Corporation Features 0.17 A, 100 High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...
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Typical Characteristics 10V GS 3.5V 6.0V 0.8 4.5V 3.0V 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 170mA ...
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Typical Characteristics 0.17A 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1ms 10ms 100ms 0.1 1s 10s DC ...
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CROSSVOLT â â â â â Rev. I2 ...