BSS110 Fairchild Semiconductor, BSS110 Datasheet - Page 5

• Manufacturer Part Number: BSS110
• Description: MOSFET P-CH 50V 170MA TO92
• Manufacturer: Fairchild Semiconductor

Specifications of BSS110

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 170mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 40pF @ 25V
• Power - Max: 630mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
0.002
0.001
0 .5
0 .4
0 .3
0 .2
0 .1
0.05
0.01
0
0.5
0.2
0.1
0.0001
1
Current and Temperature
D = 0.5
0 .2
0 .1
0 .05
0 .02
-0.2
0 .01
Single Pulse
I
D
0.001
, DRAIN CURRENT (A)
-0.4
T = -55°C
J
Figure 15. Transient Thermal Response Curve
Note : Characterization performed using a circuit board with 175
-0.6
25°C
typical case-to-ambient thermal resistance
125°C
0.01
V
DS
(continued)
-0.8
= -10V
-1
t , TIME (sec)
0.1
1
Figure 14. Maximum Safe Operating Area
0.005
0.05
0.01
0.5
0.1
2
1
1
SINGLE PULSE
.
V
T
GS
2
A
1
= 25°C
= -10V
- V
DS
, DRAIN -SOURCE VOLTAGE (V)
5
o
C/W
10
P(pk)
10
T - T
R
Duty Cycle, D = t /t
J
R
JA
2 0
t
1
A
JA
(t) = r(t) * R
BSS84 Rev. C2 / BSS110. Rev. A3
t
= P * R
2
= 3 5 0 C/W
30
o
JA
100
50
1
(t)
JA
2
80
300