IRF540N_R4942 Fairchild Semiconductor, IRF540N_R4942 Datasheet - Page 5

• Manufacturer Part Number: IRF540N_R4942
• Description: MOSFET N-CH 100V 33A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of IRF540N_R4942

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 79nC @ 20V
• Input Capacitance (ciss) @ Vds: 1220pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF540NFS; IRF540N_R4942

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Test Circuits and Waveforms
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VARY t
REQUIRED PEAK I
0V
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
1.2
1.1
1.0
0.9
P
TO OBTAIN
-80
V
t
GS
I
P
D
VOLTAGE vs JUNCTION TEMPERATURE
= 250µA
-40
AS
T
J
, JUNCTION TEMPERATURE (
0
R
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
G
40
80
10
NOTE: Refer to Application Notes AN7254 and AN7260.
8
6
4
2
0
V
I
0
(Continued)
AS
DS
120
V
DUT
DD
0.01Ω
o
C)
L
= 50V
160
160
-
+
10
V
DD
200
Q
g
, GATE CHARGE (nC)
20
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
WAVEFORMS IN
DESCENDING ORDER:
0
4000
1000
100
I
I
20
D
D
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
0.1
= 33A
= 17A
30
C
OSS
V
DS
I
≅ C
, DRAIN TO SOURCE VOLTAGE (V)
AS
40
DS
1.0
t
P
+ C
GD
BV
t
AV
DSS
C
RSS
10
V
C
GS
= C
ISS
V
= 0V, f = 1MHz
GD
DS
= C
GS
IRF540N Rev. C
+ C
V
DD
GD
100