RFD16N05 Fairchild Semiconductor, RFD16N05 Datasheet

MOSFET N-CH 50V 16A I-PAK

RFD16N05

Manufacturer Part Number
RFD16N05
Description
MOSFET N-CH 50V 16A I-PAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RFD16N05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 20V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
72W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2003 Fairchild Semiconductor Corporation
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
Packaging
RFD16N05
RFD16N05SM
PART NUMBER
DRAIN (FLANGE)
TO-251AA
TO-252AA
JEDEC TO-251AA
PACKAGE
Data Sheet
SOURCE
D16N05
D16N05
DRAIN
GATE
BRAND
Features
• 16A, 50V
• r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
November 2003
o
C Operating Temperature
RFD16N05, RFD16N05SM
= 0.047
SOURCE
GATE
JEDEC TO-252AA
G
DRAIN (FLANGE)
D
S
RFD16N05, RFD16N05SM Rev. B1
®
Model

Related parts for RFD16N05

RFD16N05 Summary of contents

Page 1

... PART NUMBER PACKAGE RFD16N05 TO-251AA RFD16N05SM TO-252AA NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A. Packaging JEDEC TO-251AA DRAIN (FLANGE) ©2003 Fairchild Semiconductor Corporation November 2003 Features • ...

Page 2

... GS Refer to Figure 0.48 T -55 to 175 STG 300 L 260 pkg MIN TYP 0V DSS 3.125 , - - 40V, I 16A 2 0.8mA g(REF) (Figure 13 900 - 325 - 100 - - - - MIN TYP - - - - RFD16N05, RFD16N05SM Rev. B1 UNITS MAX UNITS - 100 nA 0.047 125 2 2.083 C/W o 100 C/W MAX UNITS 1.5 V 125 ns ...

Page 3

... MAY LIMIT CURRENT 100ms IN THIS REGION DC = 50V 100 100 125 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES 20V ABOVE 25 C DERATE PEAK GS CURRENT AS FOLLOWS: 175 - 10V = 150 - PULSE WIDTH (s) FIGURE 5. PEAK CURRENT CAPABILITY RFD16N05, RFD16N05SM Rev. B1 150 175 + ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 10V 16A GS D 2.0 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE 2 250 A D 1.5 1.0 0.5 0 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE RFD16N05, RFD16N05SM Rev 120 160 200 o C) 120 160 200 o C) ...

Page 5

... DSS 0.50 BV DSS 0.25 BV DSS R = 3.125 0.8mA G(REF 10V REF --------------------- - t, TIME (ms) 20 ------------------------ - ACT CONSTANT GATE CURRENT BV DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH 10% FIGURE 17. RESISTIVE SWITCHING WAVEFORMS RFD16N05, RFD16N05SM Rev DSS 7 REF G ACT OFF t d(OFF 90% 10% 90% 50% ...

Page 6

... Test Circuits and Waveforms G(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT ©2003 Fairchild Semiconductor Corporation (Continued DUT G(REF g(TOT g(10 10V GS Q g(TH) FIGURE 19. GATE CHARGE WAVEFORM RFD16N05, RFD16N05SM Rev 20V GS ...

Page 7

... PSPICE Electrical Model .SUBCKT RFD16N05 rev 10/31/ 1.788e- 1.875e-10 CIN 6 8 8.33e-10 DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 64.89 EDS EGS ESG EVTO LDRAIN 2 5 1e-9 LGATE 1 9 4.56e-9 LSOURCE 3 7 4.13e-9 MOS1 MOSMOD M = 0.99 MOS2 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 0 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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