RFD16N05 Fairchild Semiconductor, RFD16N05 Datasheet - Page 3

• Manufacturer Part Number: RFD16N05
• Description: MOSFET N-CH 50V 16A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 20V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 72W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
100
10
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
1
0
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
1
0
0.01
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.1
2
1
10
-5
25
0.5
0.2
0.1
0.05
0.02
0.01
TENPERATURE
V
DS
T
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
DS(ON)
50
C
, CASE TEMPERATURE (
75
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-4
10
V
DSS(MAX)
100
Unless Otherwise Specified
125
o
= 50V
C)
T
J
SINGLE PULSE
= MAX RATED
10
150
-3
T
t, RECTANGULAR PULSE DURATION (s)
C
10ms
100ms
1ms
100 s
DC
= 25
o
C
100
175
10
-2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
200
100
16
12
20
10
8
4
0
10
25
-5
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FIGURE 5. PEAK CURRENT CAPABILITY
CASE TEMPERATURE
10
50
10
-4
V
-1
GS
T
= 20V
V
C
GS
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
10
75
t, PULSE WIDTH (s)
= 10V
-3
J
= P
100
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
DM
-2
I
10
=
x Z
RFD16N05, RFD16N05SM Rev. B1
0
P
I
25
DM
JA
1
125
10
o
/t
C DERATE PEAK
2
175 - T
x R
-1
o
t
150
1
C)
t
JA
2
C
+ T
150
10
T
C
0
A
= 25
10
o
1
C
175
10
1