RFD16N05 Fairchild Semiconductor, RFD16N05 Datasheet - Page 5

• Manufacturer Part Number: RFD16N05
• Description: MOSFET N-CH 50V 16A I-PAK
• Manufacturer: Fairchild Semiconductor

Specifications of RFD16N05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 47 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 20V
• Input Capacitance (ciss) @ Vds: 900pF @ 25V
• Power - Max: 72W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
Test Circuits and Waveforms
©2003 Fairchild Semiconductor Corporation
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VARY t
REQUIRED PEAK I
0V
V
1600
1200
800
400
GS
0
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
0
P
FIGURE 16. SWITCHING TIME TEST CIRCUIT
TO OBTAIN
V
t
GS
P
V
5
AS
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
10
R
G
R
GS
C
C
C
ISS
OSS
RSS
15
V
DS
V
V
C
C
C
I
Unless Otherwise Specified (Continued)
AS
DS
GS
ISS
RSS
OSS
DUT
R
DUT
= 0V, f = 1MHz
= C
L
0.01
= C
L
20
GS
C
GD
DS
+ C
+ C
+
-
-
GD
+
V
V
DD
GS
DD
25
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
0
0
0
V
V
37.5
12.5
GS
DS
10%
50
25
0
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
t
V
d(ON)
90%
DD
20
CONSTANT GATE CURRENT
50%
t
ON
I
------------------------ -
I
= BV
G ACT
G REF
10%
t
DSS
r
I
AS
PULSE WIDTH
R
I
V
G(REF)
GS
t, TIME (ms)
L
t
0.75 BV
0.50 BV
0.25 BV
P
= 3.125
= 10V
= 0.8mA
DSS
DSS
DSS
BV
t
AV
DSS
RFD16N05, RFD16N05SM Rev. B1
80
V
DD
I
--------------------- -
I
G ACT
G REF
t
d(OFF)
= BV
90%
V
t
OFF
DS
50%
DSS
t
f
10%
V
90%
10
7.5
5
2.5
0
DD