FDFS2P103A Fairchild Semiconductor, FDFS2P103A Datasheet
FDFS2P103A
Manufacturer Part Number
FDFS2P103A
Description
MOSFET P-CH 30V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDFS2P103A.pdf
(6 pages)
Specifications of FDFS2P103A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
59 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
535pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.059 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 5.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P103ATR
FDFS2P103A_NL
FDFS2P103A_NLTR
FDFS2P103A_NLTR
FDFS2P103A_NL
FDFS2P103A_NLTR
FDFS2P103A_NLTR
FDFS2P103A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
Schottky diode allows its use in a variety of DC/DC
converter topologies.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
V
I
Package Marking and Ordering Information
D
O
J
DSS
GSS
D
RRM
, T
Device Marking
STG
FDFS2P103A
FDFS2P103A
SO-8
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
C
C
The independently connected
Pin 1
combines
D
D
FDFS2P103A
– Continuous
– Pulsed
Device
Parameter
A
the
A
S
exceptional
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
Features
–5.3 A, –30V R
V
V
Schottky and MOSFET incorporated into single
Electrically independent Schottky and MOSFET
power surface mount SO-8 package
pinout for design flexibility
F
F
< 0.35 V @ 1 A (T
< 0.25 V @ 1 A (T
G
A
A
S
1
2
4
3
Tape width
R
–
DS(ON)
DS(ON)
12mm
Ratings
55 to +150
–
–
–
1.6
0.9
J
J
30
5.3
2
1
1
30
25
20
= 125 C)
= 25 C)
= 59 m
= 92 m
@ V
@ V
8
7
5
6
August 2002
FDFS2P103A Rev C (W)
GS
GS
C
C
D
D
= –10 V
= –4.5 V
2500 units
Quantity
Units
W
V
V
A
V
A
C
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FDFS2P103A Summary of contents
Page 1
... =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) Reel Size 13’’ August 2002 = –10 V DS(ON –4.5 V DS(ON 125 Ratings Units – – A 5.3 – 1.6 1 0.9 – +150 Tape width Quantity 12mm 2500 units FDFS2P103A Rev C (W) ...
Page 2
... A (Note 0. 125 125 Min Typ Max Units –30 V –22 mV/ C –1 A ±100 nA –1 –1.8 –3 V 4.2 mV 8.9 S 535 pF 135 4 5 1.8 nC 2.4 nC –1.3 A –0.8 –1.2 V 160 500 A 225 280 mV 80 250 mV 305 350 mV 185 250 mV 380 420 mV FDFS2P103A Rev C (W) ...
Page 3
... Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% (Note 1a) (Note 1c) (Note 1) is determined by the user's board design 125°C/W when mounted 0.02 in pad copper 78 C/W 135 C/W 40 C/W c) 135°C/W when mounted on a minimum pad. FDFS2P103A Rev C (W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.5V -4.0V -4.5V -5.0V -6.0V -10V DRAIN CURRENT ( -2.65A 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) SD FDFS2P103A Rev C (W) ...
Page 5
... Figure 8. Capacitance Characteristics. 1 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.3 0.4 0 Figure 10. Schottky Diode Reverse Current. 0 1MHz iss C oss rss DRAIN TO SOURCE VOLTAGE ( 125 REVERSE VOLTAGE ( ( 135 °C/W JA P(pk ( Duty Cycle 100 FDFS2P103A Rev C ( 1000 ...
Page 6
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