FDFS2P103A Fairchild Semiconductor, FDFS2P103A Datasheet - Page 5

• Manufacturer Part Number: FDFS2P103A
• Description: MOSFET P-CH 30V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P103A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 59 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 5V
• Input Capacitance (ciss) @ Vds: 535pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.059 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 5.3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P103ATR; FDFS2P103A_NL; FDFS2P103A_NLTR; FDFS2P103A_NLTR

Typical Characteristics
0.001
0.01
Figure 9. Schottky Diode Forward Voltage.
10
0.1
10
8
6
4
2
0
1
Figure 7. Gate Charge Characteristics.
0
0
0.01
0.1
1
0.001
I
D
= -5.3A
D = 0.5
2
0.2
0.1
T
0.1
0.05
J
V
= 125
F
0.02
, FORWARD VOLTAGE (V)
Q
4
0.01
g
o
, GATE CHARGE (nC)
C
SINGLE PULSE
0.01
0.2
6
Figure 11. Transient Thermal Response Curve.
V
DS
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
= -10V
T
J
8
= 25
o
-20V
0.3
C
10
-15V
0.1
0.4
12
0.000001
0.00001
0.0001
Figure 10. Schottky Diode Reverse Current.
1
0.001
800
600
400
200
0.01
0.1
0
Figure 8. Capacitance Characteristics.
1
0
0
C
rss
5
-V
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
V
10
R
, REVERSE VOLTAGE (V)
C
10
oss
T
T
J
J
= 125
= 25
10
15
o
o
C
C
C
P(pk)
iss
Duty Cycle, D = t
100
T
R
20
R
J
JA
- T
JA
(t) = r(t) + R
15
A
FDFS2P103A Rev C (W)
t
= 135 °C/W
1
= P * R
t
2
V
f = 1MHz
25
GS
= 0 V
JA
1
(t)
JA
/ t
2
20
30
1000