FDFS2P103A Fairchild Semiconductor, FDFS2P103A Datasheet - Page 3

MOSFET P-CH 30V 5.3A 8-SOIC

FDFS2P103A

Manufacturer Part Number
FDFS2P103A
Description
MOSFET P-CH 30V 5.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFS2P103A

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
59 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
535pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.059 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 5.3 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P103ATR
FDFS2P103A_NL
FDFS2P103A_NLTR
FDFS2P103A_NLTR
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Thermal Characteristics
R
R
R
JA
JA
JC
JA
the drain pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
JC
is guaranteed by design while R
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
CA
is determined by the user's board design.
b)
(Note 1a)
(Note 1c)
(Note 1)
125°C/W when
mounted on a
0.02 in
2 oz copper
2
pad of
135
78
40
c)
135°C/W when
mounted on a
minimum pad.
FDFS2P103A Rev C (W)
C/W
C/W
C/W

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