FDB6690S Fairchild Semiconductor, FDB6690S Datasheet - Page 4

MOSFET N-CH 30V 42A TO-263AB

FDB6690S

Manufacturer Part Number
FDB6690S
Description
MOSFET N-CH 30V 42A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB6690S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15.5 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
42A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
1238pF @ 15V
Power - Max
48W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.00155 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
33 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
42 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB6690S
Manufacturer:
FAIRCHILD
Quantity:
12 500
Typical Characteristics
1000
100
10
10
8
6
4
2
0
1
0.1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
0.01
R
I
0.1
D
DS(ON)
0.00001
= 21A
SINGLE PULSE
1
R
V
JC
T
GS
A
LIMIT
= 2.6
= 25
= 10V
5
D = 0.5
o
o
V
C/W
C
0.2
0.1
0.05
DS
0.02
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE
PULSE
1
g
, GATE CHARGE (nC)
10
0.0001
DC
V
100ms
Figure 11. Transient Thermal Response Curve.
D S
10ms
15
= 10V
1ms
(continued)
10
100µs
20V
20
10µs
15V
0.001
100
25
t
1
, TIME (sec)
1600
1200
2000
1600
1200
800
400
800
400
0.00001
0
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
0.01
5
0.0001
V
C
DS
Power Dissipation.
OSS
, DRAIN TO SOURCE VOLTAGE (V)
10
0.001
t
C
1
, TIME (sec)
ISS
15
Duty Cycle, D = t
P(pk
T
R
0.1
J
R
- Tc = P * R
0.01
JC
J C
(t) = r(t) * R
t
= 2.6 °C/W
1
20
t
2
FDP6690S/FDB6690S Rev C (W)
SINGLE PULSE
R
0.1
JC
JC
T
1
A
J C
(t)
= 2.6°C/W
/ t
25
= 25°C
2
V
f = 1MHz
GS
= 0 V
30
1
1

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