FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 172

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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MMSZ4692
MMSZ5235B
MMSZ5236B
MMSZ5237B
MMSZ5238B
MMSZ5239B
MMSZ4697
MMSZ5240B
MMSZ5241B
MMSZ5242B
MMSZ5243B
MMSZ5244B
MMSZ4702
MMSZ5245B
MMSZ4703
MMSZ5246B
MMSZ5247B
MMSZ5248B
MMSZ4706
MMSZ5249B
MMSZ5250B
MMSZ5251B
MMSZ5252B
MMSZ5253B
MMSZ5254B
MMSZ5255B
MMSZ5256B
MMSZ5257B
SOT-23
MMBZ5221B
MMBZ5223B
BZX84C3V3
MMBZ5226B
BZX84C3V6
MMBZ5227B
Products
V
Z
Voltage (V)
Nominal Zener
6.8
6.8
7.5
8.2
8.7
9.1
2.4
2.7
3.3
3.3
3.6
3.6
10
10
11
12
13
14
15
15
16
16
17
18
19
19
20
22
24
25
27
28
30
33
Dissipation (W)
P
D
Total Device
0.35
0.35
0.35
0.35
0.35
0.35
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
2-167
Discrete Power Products –
Maximum Z
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
85
28
85
24
–
5
6
8
8
–
–
–
–
–
–
Z
(Ω)
Diodes and Rectifiers