FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 66

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
TO-220F (Continued)
IRFS644B
FQPF9N25
FQPF9N25C
IRFS634B
FQPF6N25
IRFS624B
FQPF4N25
IRFS614B
FQPF3N25
FQPF22N30
FQPF14N30
FQPF9N30
FQPF5N30
FQPF3N30
FQPF2N30
FQPF17N40
IRFS750A
FQPF11N40C
IRFS740B
FQPF7N40
FQPF6N40C
IRFS730B
FQPF5N40
IRFS720B
FQPF3N40
IRFS710B
FQPF2N40
FQPF18N50V2
FQPF13N50
FQPF13N50C
FQPF9N50
FQPF9N50C
IRFS840B
FQPF6N50
FQPF5N50C
Products
Min. (V)
BV
250
250
250
250
250
250
250
250
250
300
300
300
300
300
300
400
400
400
400
400
400
400
400
400
400
400
400
500
500
500
500
500
500
500
500
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.265
10V
0.28
0.42
0.43
0.45
1.75
0.16
0.29
0.45
0.27
0.53
0.54
1.75
0.43
0.48
0.73
0.85
1.1
2.2
0.9
2.2
3.7
0.3
0.8
1.6
3.4
3.4
5.8
0.8
1.3
1.4
1
2
1
1
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-61
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
15.5
26.5
13.5
16.5
101
GS
6.6
4.3
8.1
9.8
5.5
3.7
7.7
47
29
47
30
17
45
28
41
16
25
10
14
42
45
43
28
28
41
17
18
4
6
4
=5V
I
D
6.7
8.8
8.1
4.1
2.8
2.8
2.3
8.5
3.9
2.1
9.5
8.4
4.6
5.5
3.3
1.6
1.1
7.3
5.3
3.6
14
12
11
10
18
13
4
6
2
6
3
2
9
8
5
(A)
MOSFETs
P
D
43
45
38
38
37
34
32
22
27
56
50
42
35
20
40
56
49
44
44
42
38
38
35
33
20
23
16
69
56
48
50
44
44
42
38
(W)