FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 50

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220 (Continued)
FQP12P10
SFP9530
FQP8P10
SFP9520
FQP5P10
SFP9510
FQP47P06
FQP27P06
FQP17P06
SFP9Z34
FQP11P06
SFP9Z24
SFP2955
FQP7P06
SFP9Z14
NDP6020P
FDP4020P
Products
Min. (V)
BV
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
-20
-20
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.026
0.175
10V
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.3
0.6
1.2
0.3
0.5
–
–
R
4.5V
DS(ON)
0.05
0.08
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-45
0.075-10.07@2.7V
2.5V
0.11
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
9.5
21
30
12
16
84
33
21
30
13
15
15
25
9
9
= 5V
I
D
11.5
10.5
11.4
4.5
3.6
9.7
9.4
6.7
6.7
47
27
17
18
24
16
8
6
(A)
MOSFETs
P
D
37.5
160
120
66
49
32
82
49
45
60
75
65
40
79
53
49
38
(W)