FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 163

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Transient Voltage Suppressors (Continued)
SMCJ170CA
Products
Voltage (V)
Stand-off
Reverse
V
170
RWM
V
Min
189
BR
Voltage (V)
Breakdown
Max
209
Condition
I
T
Test
(mA)
1
Voltage @ I
Max Clamping
2-158
275
V
C
PPM
(V)
Discrete Power Products –
Surge Current (A)
Max Peak Pulse
I
PPM
5.5
Leakage @ V
I
R
Max Reverse
(µA)
5
RWM
Diodes and Rectifiers
P
PPM
1500
(W)
Bidirectional
Direction