FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 45

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-220 (Continued)
IRL520A
IRL510A
FDP3632
FQP90N10V2
HUF75645P3
HUFA75645P3
HUF76645P3
HUFA76645P3
FDP3652
FQP70N10
HUF75639P3
HUFA75639P3
FQP55N10
HUF76639P3
HUFA76639P3
HUF75637P3
HUFA75637P3
HUF76633P3
HUFA76633P3
FDP3682
FQP44N10
HUF75631P3
HUFA75631P3
IRF550A
FQP33N10
IRF540A
FQP33N10L
HUF75623P3
HUFA75623P3
FQP19N10
FQP19N10L
IRF530A
FQP13N10
FQP13N10L
IRF520A
FQP7N10
FQP7N10L
IRF510A
FDP3672
FQP32N12V2
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
105
120
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.009
0.014
0.014
0.014
0.014
0.016
0.025
0.025
0.025
0.026
0.026
0.026
0.035
0.035
0.036
0.039
0.052
0.052
0.052
0.064
0.064
0.033
10V
0.01
0.03
0.03
0.04
0.04
0.04
0.11
0.18
0.18
0.35
0.35
0.05
0.1
0.1
0.2
0.4
–
–
0.015@6V
0.026@6V
0.055@5V
0.055@6V
0.22@5V
0.44@5V
0.06@6V
0.11@5V
0.38@5V
R
0.2@5V
0.015
0.015
0.027
0.027
0.036
0.036
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-40
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
10.2
18.5
146
106
106
127
127
5.5
8.7
5.8
4.6
8.5
84
41
85
57
57
75
71
71
48
48
56
56
48
35
35
75
38
60
30
23
23
19
14
27
12
16
28
41
= 5V
I
D
43.5
12.8
12.8
9.2
5.6
9.2
7.3
7.3
5.6
80
90
75
75
75
75
61
57
56
56
55
51
51
44
44
39
39
32
33
33
40
33
28
33
22
22
19
19
14
41
32
(A)
MOSFETs
P
D
310
250
310
310
310
310
150
160
200
200
155
180
180
155
155
145
145
146
120
120
167
127
107
127
135
150
49
37
95
85
85
75
75
55
65
65
45
40
40
33
(W)