FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 81

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-3PF NPN Configuration
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Products
I
C
15
15
10
15
10
15
10
10
8
8
6
8
6
(A)
V
CEO
120
120
230
230
120
120
140
230
120
140
230
140
140
(V) V
CBO
200
200
230
230
120
200
200
230
120
200
230
200
200
(V) V
EBO
8
8
5
5
5
8
6
5
5
6
5
6
6
(V) P
C
150
150
100
130
100
130
50
30
60
80
60
80
80
(W)
Min
120
120
120
55
55
55
50
55
55
50
55
50
50
2-76
Discrete Power Products –
Max
250
250
160
160
160
250
180
160
160
180
160
180
180
h
FE
@I
C
3
3
1
1
1
3
3
1
1
3
1
3
3
(A)
Bold = New Products (introduced January 2003 or later)
@V
CE
4
4
–
–
5
4
5
5
5
4
4
4
4
(V)
Typ (V) Max (V) @I
Bipolar Transistors and JFETs
0.4
0.4
–
–
–
–
–
–
–
–
–
–
–
0.5
0.5
2.5
0.5
0.5
0.5
2.5
0.5
0.5
0.5
0.5
3
3
V
CE
(sat)
C
–
–
3
3
5
3
5
5
5
5
5
5
5
(A) @I
0.3
0.3
0.5
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.5
B
–
–
(A)