HUFA75617D3S Fairchild Semiconductor, HUFA75617D3S Datasheet - Page 9

• Manufacturer Part Number: HUFA75617D3S
• Description: MOSFET N-CH 100V 16A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75617D3S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 20V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 64W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 24 May 2000
HUFA75617D
CTHERM1 th 6 1.00e-3
CTHERM2 6 5 4.00e-3
CTHERM3 5 4 4.00e-3
CTHERM4 4 3 3.60e-3
CTHERM5 3 2 7.00e-3
CTHERM6 2 tl 5.00e-2
RTHERM1 th 6 1.59e-2
RTHERM2 6 5 3.96e-2
RTHERM3 5 4 1.12e-1
RTHERM4 4 3 4.27e-1
RTHERM5 3 2 6.45e-1
RTHERM6 2 tl 7.00e-1
SABER Thermal Model
SABER thermal model HUFA75617D
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 1.00e-3
ctherm.ctherm2 6 5 = 4.00e-3
ctherm.ctherm3 5 4 = 4.00e-3
ctherm.ctherm4 4 3 = 3.60e-3
ctherm.ctherm5 3 2 = 7.00e-3
ctherm.ctherm6 2 tl = 5.00e-2
rtherm.rtherm1 th 6 = 1.59e-2
rtherm.rtherm2 6 5 = 3.96e-2
rtherm.rtherm3 5 4 = 1.12e-1
rtherm.rtherm4 4 3 = 4.27e-1
rtherm.rtherm5 3 2 = 6.45e-1
rtherm.rtherm6 2 tl = 7.00e-1
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM1
RTHERM3
RTHERM4
RTHERM6
th
tl
5
4
3
2
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM4
CTHERM6
HUFA75617D3 Rev. B