HUF75939P3 Fairchild Semiconductor, HUF75939P3 Datasheet
HUF75939P3
Specifications of HUF75939P3
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HUF75939P3 Summary of contents
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... NOTE: When ordering, use the entire part number Unless Otherwise Specified , 10V V GS PACKAGE BRAND TO-220AB 75939P TO-263AB 75939S HUF75939P3, HUF75939S3ST UNITS 200 DSS 200 DGR Figure 4 DM Figures 6, 14, 15 180 D 1.2 -55 to 175 STG 300 L 260 pkg HUF75939P3, HUF75939S3ST Rev ...
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... SYMBOL TEST CONDITIONS 22A 11A 22A, dI /dt = 100A 22A, dI /dt = 100A MIN TYP 200 - - - 0.102 - - - - - - - 100V, - 117 - 64 = 1.0mA - 2200 - 400 - 120 MIN TYP - - - - - - - - HUF75939P3, HUF75939S3ST Rev. B MAX UNITS - 250 A 100 0.125 o 0. 147 ns 152 MAX UNITS 1.25 V 1.00 V 240 ns 1500 nC ...
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... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUF75939P3, HUF75939S3ST Rev. B 175 ...
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... DSS (L/R)ln[(I *R)/(1.3*RATED DSS 1 0.001 0.01 0 TIME IN AVALANCHE (ms) AV CAPABILITY 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 1 1.0 0.8 0.6 -80 - JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE HUF75939P3, HUF75939S3ST Rev + =4. 250 120 160 200 o C) ...
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... C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 100V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC DUT 0.01 10000 1000 OSS DS GD 100 C RSS 10 0 DRAIN TO SOURCE VOLTAGE ( 22A DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS HUF75939P3, HUF75939S3ST Rev 0V 1MHz ISS 100 200 ...
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... V GS FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation (Continued DUT 0 I g(REF DUT g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. SWITCHING TIME WAVEFORM HUF75939P3, HUF75939S3ST Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...
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... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN 18 EBREAK - 16 21 MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75939P3, HUF75939S3ST Rev. B DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP RGATE - + RLGATE S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN MWEAK 8 DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP VBAT RVTHRES HUF75939P3, HUF75939S3ST Rev. B DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF75939P3, HUF75939S3ST Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...