HUF75939P3 Fairchild Semiconductor, HUF75939P3 Datasheet - Page 4

• Manufacturer Part Number: HUF75939P3
• Description: MOSFET N-CH 200V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75939P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 20V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2001 Fairchild Semiconductor Corporation
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
200
100
0.1
10
40
30
20
10
1
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1
2
0
-80
FIGURE 7. TRANSFER CHARACTERISTICS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
DD
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
RESISTANCE vs JUNCTION TEMPERATURE
= 15V
-40
V
DS
V
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
J
3
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
T
J
DS(ON)
0
= 175
10
o
40
C
T
T
SINGLE PULSE
4
J
C
= MAX RATED
= 25
10ms
80
o
C
T
V
J
GS
(Continued)
= 25
T
120
J
1ms
= 10V, I
= -55
5
o
o
100
C
C)
100 s
o
160
C
D
= 22A
300
200
6
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
10
40
30
20
10
1
0.001
1.2
1.0
0.8
0.6
0
0
-80
FIGURE 8. SATURATION CHARACTERISTICS
If R = 0
t
If R
t
AV
AV
STARTING T
= (L)(I
= (L/R)ln[(I
CAPABILITY
JUNCTION TEMPERATURE
0
-40
1
AS
V
t
AV
DS
T
0.01
)/(1.3*RATED BV
J
, TIME IN AVALANCHE (ms)
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
J
AS
= 150
0
*R)/(1.3*RATED BV
V
V
GS
GS
2
o
= 10V
= 5V
C
40
0.1
3
DSS
HUF75939P3, HUF75939S3ST Rev. B
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
80
C
- V
V
= 25
GS
DSS
DD
STARTING T
4
)
= V
o
120
- V
C
DS
DD
1
o
, I
C)
) +1]
V
D
GS
= 250 A
160
5
J
= 25
=4.5V
o
C
200
10
6