HUF75939P3 Fairchild Semiconductor, HUF75939P3 Datasheet - Page 9

• Manufacturer Part Number: HUF75939P3
• Description: MOSFET N-CH 200V 22A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75939P3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 152nC @ 20V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SPICE Thermal Model
REV 10 October 2000
T75939
CTHERM1 th 6 2.8e-3
CTHERM2 6 5 4.6e-3
CTHERM3 5 4 5.5e-3
CTHERM4 4 3 9.2e-3
CTHERM5 3 2 1.7e-2
CTHERM6 2 tl 4.3e-2
RTHERM1 th 6 5e-4
RTHERM2 6 5 1.5e-3
RTHERM3 5 4 2e-2
RTHERM4 4 3 9e-2
RTHERM5 3 2 1.9e-1
RTHERM6 2 tl 2.9e-1
SABER Thermal Model
SABER thermal model T75939
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.8e-3
ctherm.ctherm2 6 5 = 4.6e-3
ctherm.ctherm3 5 4 = 5.5e-3
ctherm.ctherm4 4 3 = 9.2e-3
ctherm.ctherm5 3 2 = 1.7e-2
ctherm.ctherm6 2 tl = 4.3e-2
rtherm.rtherm1 th 6 = 5e-4
rtherm.rtherm2 6 5 = 1.5e-3
rtherm.rtherm3 5 4 = 2e-2
rtherm.rtherm4 4 3 = 9e-2
rtherm.rtherm5 3 2 = 1.9e-1
rtherm.rtherm6 2 tl = 2.9e-1
}
©2001 Fairchild Semiconductor Corporation
RTHERM5
RTHERM2
RTHERM1
RTHERM3
RTHERM4
RTHERM6
th
tl
5
4
3
2
6
JUNCTION
CASE
HUF75939P3, HUF75939S3ST Rev. B
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM4
CTHERM6