FDPF52N20T Fairchild Semiconductor, FDPF52N20T Datasheet

MOSFET N-CH 200V 52A TO-220F

FDPF52N20T

Manufacturer Part Number
FDPF52N20T
Description
MOSFET N-CH 200V 52A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF52N20T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP52N20 / FDPF52N20T Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP52N20 / FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω
Features
• R
• Low gate charge ( Typ. 49nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.041Ω ( Typ.)@ V
( Typ. 66pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
D
S
TO-220
FDP Series
GS
= 10V, I
D
T
= 26A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
G
o
C unless otherwise noted
= 25
D
S
o
C)
C
C
= 25
= 100
1
o
TO-220F
FDPF Series
C
o
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
G
FDP52N20
FDP52N20
2.86
0.35
62.5
208
357
0.5
52
33
-55 to +150
S
2520
D
35.7
200
±30
300
4.5
52
FDPF52N20T
FDPF52N20T
UniFET
208*
38.5
62.5
October 2007
52*
33*
0.3
3.3
-
www.fairchildsemi.com
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

Related parts for FDPF52N20T

FDPF52N20T Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP52N20 / FDPF52N20T Rev. A Description = 10V 26A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... Starting ≤ 52A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP52N20 / FDPF52N20T Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C 4000 oss C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP52N20 / FDPF52N20T Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage 20V G S ° * Note : ...

Page 4

... Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current Case Temperature [ C FDP52N20 / FDPF52N20T Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : µ 250 A D 100 150 200 ° Figure 9-2. Maximum Safe Operating Area 10 µ µ 100 100 ms 10 ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP52N20 - Figure 11-2. Transient Thermal Response Curve - FDPF52N20T FDP52N20 / FDPF52N20T Rev. A (Continued) D =0.5 0.2 0.1 0.05 0.02 0.01 single pulse - are lse D uration [ D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse - Square W ave Pulse Duration [sec] ...

Page 6

... FDP52N20 / FDPF52N20T Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP52N20 / FDPF52N20T Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP52N20 / FDPF52N20T Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] 9.40 FDP52N20 / FDPF52N20T Rev. A TO-220F ±0.20 ±0.10 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Green FPS™ Build it Now™ Green FPS™ e-Series™ CorePLUS™ GTO™ ...

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