FDPF52N20T Fairchild Semiconductor, FDPF52N20T Datasheet - Page 5

• Manufacturer Part Number: FDPF52N20T
• Description: MOSFET N-CH 200V 52A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF52N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP52N20 / FDPF52N20T Rev. A
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve - FDP52N20
Figure 11-2. Transient Thermal Response Curve - FDPF52N20T
10
10
10
10
10
-1
-2
10
-1
-2
0
10
-5
-5
D=0.5
D =0.5
0.02
0.01
0.05
0.01
0.02
0.05
0.1
0.1
0.2
0.2
10
10
single pulse
-4
-4
t
t
1
1
, S q u are W a ve P u lse D uration [se c]
, Square W ave Pulse Duration [sec]
single pulse
10
10
-3
-3
(Continued)
10
10
-2
-2
5
* N o tes :
P
1 . Z
2 . D uty F actor, D =t
3 . T
DM
* N otes :
P
10
1. Z
2. D uty Factor, D =t
3. T
10
DM
θ
JM
JC
-1
-1
(t) = 0.3 5
θ
JM
- T
JC
(t) = 3.3
- T
C
t
= P
1
C
t
2
= P
t
D M
1
t
0
2
DM
C /W M ax.
* Z
0
C /W M ax.
10
10
1
* Z
/t
θ
JC
2
0
1
0
(t)
θ
/t
JC
2
(t)
10
10
1
1
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