FDPF52N20T Fairchild Semiconductor, FDPF52N20T Datasheet - Page 2

• Manufacturer Part Number: FDPF52N20T
• Description: MOSFET N-CH 200V 52A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF52N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2900pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP52N20 / FDPF52N20T Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.4mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
∆BV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
∆T
≤ 52A, di/dt ≤ 200A/µs, V
FDPF52N20T
DSS
FDP52N20
J
AS
= 52A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF52N20T
G
FDP52N20
DSS
= 25Ω, Starting T
Device
, Starting T
Parameter
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 200V, V
= 160V, T
= 0V, I
= ±30V, V
= 40V, I
= 25V, V
= 160V, I
= 100V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
2
SD
SD
D
Reel Size
D
= 25
D
GS
D
GS
D
= 26A
= 52A
= 52A
C
= 26A
GS
DS
= 250µA
= 20A
= 52A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
200
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.041
2230
Typ.
162
540
175
1.3
0.2
66
49
19
24
53
48
29
35
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.049
±100
2900
359
107
700
100
115
204
1.5
5.0
68
10
63
52
1
50
50
-
-
-
-
-
-
-
Units
V/
pF
pF
pF
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
µC
Ω
V
V
S
A
A
V
o
C