FDPF55N06 Fairchild Semiconductor, FDPF55N06 Datasheet - Page 3

• Manufacturer Part Number: FDPF55N06
• Description: MOSFET N-CH 60V 55A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF55N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 22 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP55N06/FDPF55N06 Rev. A
Typical Performance Characteristics
2500
2000
1500
1000
10
10
10
500
Figure 5. Capacitance Characteristics
2
1
0
10
0
0.05
0.04
0.03
0.02
Figure 1. On-Region Characteristics
10
Figure 3. On-Resistance Variation vs.
-1
Top :
Bottom : 4.5 V
-1
0
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
25
C
C
C
V
V
oss
iss
rss
V
GS
50
DS
DS
= 10V
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
I
D
0
75
, Drain Current [A]
10
0
100
125
C
C
C
iss
oss
rss
= C
= C
= C
gs
gd
ds
10
* Notes :
+ C
150
* Note : T
+ C
1
1. 250
2. T
gd
gd
* Note :
C
V
(C
= 25
1. V
2. f = 1 MHz
µ
GS
s Pulse Test
ds
10
= 20V
J
= shorted)
o
175
GS
C
= 25
1
= 0 V
o
C
200
3
10
10
10
10
10
10
12
10
Figure 6. Gate Charge Characteristics
8
6
4
2
0
Figure 4. Body Diode Forward Voltage
2
1
0
2
1
0
0.2
0
2
Figure 2. Transfer Characteristics
25
o
Variation vs. Source Current
C
0.4
150
5
o
C
0.6
and Temperatue
150
4
V
V
Q
o
GS
SD
C
G
10
, Source-Drain voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
V
-55
0.8
25
DS
DS
o
o
= 30V
= 48V
C
C
1.0
15
6
1.2
20
* Notes :
* Notes :
1. V
2. 250
1. V
2. 250
1.4
* Note : I
8
DS
GS
µ
= 30V
µ
= 0V
s Pulse Test
s Pulse Test
25
www.fairchildsemi.com
D
= 55A
1.6
1.8
10
30