FDPF55N06

Manufacturer Part NumberFDPF55N06
DescriptionMOSFET N-CH 60V 55A TO-220F
ManufacturerFairchild Semiconductor
SeriesUniFET™
FDPF55N06 datasheet
 

Specifications of FDPF55N06

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs22 mOhm @ 27.5A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C55AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs37nC @ 10VInput Capacitance (ciss) @ Vds1510pF @ 25V
Power - Max48WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
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FDP55N06/FDPF55N06
60V N-Channel MOSFET
Features
= 0.022 Ω @V
• 55A, 60V, R
DS(on)
GS
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220
G
D
S
FDP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8∀ from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θJS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2005 Fairchild Semiconductor Corporation
FDP55N06/FDPF55N06 Rev. A
Description
= 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
TO-220F
G
D
S
FDPF Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
1
UniFET
D
G
S
FDP55N06
FDPF55N06
60
55
55 *
34.8
34.8 *
220
220 *
± 25
480
55
11.4
4.5
114
48
0.9
0.4
-55 to +150
300
FDP55N06
FDPF55N06
1.1
2.58
0.5
--
62.5
62.5
www.fairchildsemi.com
TM
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

FDPF55N06 Summary of contents

  • Page 1

    ... Thermal Resistance, Case-to-Sink Typ. θJS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDP55N06/FDPF55N06 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

  • Page 2

    ... V = 50V ≤ 55A, di/dt ≤ 200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FDP55N06/FDPF55N06 Rev. A Package Reel Size TO-220 TO-220F T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µ ...

  • Page 3

    ... Drain Current and Gate Voltage 0.05 0.04 0. 10V GS 0. 100 I , Drain Current [A] D Figure 5. Capacitance Characteristics 2500 C 2000 oss C iss 1500 1000 C rss 500 Drain-Source Voltage [V] DS FDP55N06/FDPF55N06 Rev. A Figure 2. Transfer Characteristics Notes : 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : ...

  • Page 4

    ... Figure 9-1. Maximum Safe Operating Area for FDP55N06 Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature FDP55N06/FDPF55N06 Rev. A (Continued) * Notes : 250 µ 100 150 200 o C] Figure 9-2. Maximum Safe Operating Area µ s 100 µ s ...

  • Page 5

    ... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP55N06 Figure 11-2. Transient Thermal Response Curve for FDPF55N06 FDP55N06/FDPF55N06 Rev. A (Continued) D=0.5 0.2 0.1 0.05 0.02 * Notes : 0. Duty Factor, D=t single pulse Square W ave Pulse Duration [sec =0.5 0.2 0.1 ...

  • Page 6

    ... Unclamped Inductive Switching Test Circuit & Waveforms FDP55N06/FDPF55N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

  • Page 7

    ... FDP55N06/FDPF55N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

  • Page 8

    ... FDP55N06/FDPF55N06 Rev. A TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 9

    ... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP55N06/FDPF55N06 Rev. A TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...