BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 11

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF power MOS transistor
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.15 Third order intermodulation distortion as a
Class-AB operation; V
P
R
Fig.17 Power gain as a function of frequency,
L
th mb-h
1
(dB)
d 3
(dB)
= 30 W; T
= 34 ; Z
G p
20
30
40
50
21
20
19
= 0.3 K/W; f = 28 MHz.
0
0
function of load power, typical values.
typical values.
h
L
h
= 25 C.
h
= 8.9
= 25 C; R
= 70 C.
6
j1 .
DS
DS
20
th mb-h
= 28 V; I
= 28 V; I
12
= 0.3 K/W;
DQ
DQ
= 0.25 A;
= 0.25 A;
18
40
P L (W)
24
f (MHz)
MGP046
MGP048
60
30
Rev. 04 - 5 January 2007
Table 1
Input impedance as a function of frequency
Class-AB operation; V
T
Z
handbook, halfpage
h
L
= 25 C; R
= 8.9 + j1 .
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.16 Fifth order intermodulation distortion as a
th mb-h
(dB)
d 5
20
30
40
50
0
= 0.3 K/W; f = 28 MHz.
function of load power, typical values.
(MHz)
h
1.5
3.0
6.0
= 25 C.
h
10
15
20
25
30
th mb-h
f
= 70 C.
= 0.3 K/W; R1 = 34 ;
DS
20
DS
= 28 V; I
= 28 V; I
DQ
= 0.25 A;
DQ
40
= 0.25 A; P
Product specification
32.4
30.7
27.4
32.9
18.5
15.1
12.5
32.9
P L (W)
( )
Z
BLF145
MGP047
i
j11.9
j14.6
j15.4
j15.3
j14.6
11 of 15
j2.2
j4.3
j8.1
60
L
= 30 W;