BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 8

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
List of components (see Fig.11)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with epoxy dielectric (
handbook, full pagewidth
C1, C3, C8, C9
C2, C10
C4, C7
C5, C6
C11
C12
L1
L2, L3
L4
L5
L6
R1
R2
COMPONENT
HF power MOS transistor
f = 28 MHz.
input
50
film dielectric trimmer
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor
electrolytic capacitor
12 turns enamelled 0.5 mm copper wire
stripline; note 2
14 turns enamelled 1 mm copper wire
9 turns enamelled 1 mm copper wire
grade 3B Ferroxcube wideband HF choke
0.25 W metal film resistor
0.25 W metal film resistor
C1
DESCRIPTION
C2
C3
L1
Fig.11 Test circuit for class-A operation.
V G
R1
C4
L2
Rev. 04 - 5 January 2007
D.U.T.
L3
C7
7 to 100 pF
39 pF
100 nF
27 pF
3
2.2 F, 63 V
307 nH
30
1039 nH
305 nH
26
10
L4
VALUE
100 nF
R2
L6
C5
C6
L5
length 8 mm;
int. dia. 4 mm
length 15
length 14 mm;
int. dia. 9 mm
length 10 mm;
int. dia. 6 mm
DIMENSIONS
C11
C8
C10
C9
C12
6 mm
r
V D
= 4.5), thickness 1.6 mm.
MGP042
2222 809 07015
2222 852 47104
2222 852 47104
2222 030 38228
4312 020 36640
Product specification
output
CATALOGUE NO.
50
BLF145
.
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