BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 5

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
handbook, halfpage
handbook, halfpage
R DS(on)
HF power MOS transistor
(mV/K)
V
Fig.4
I
V
Fig.6
( )
D
T.C.
DS
GS
= 1.5 A;
= 10 V.
0.8
0.6
0.4
0.2
= 10 V.
0
4
2
0
2
4
6
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
40
10
2
80
10
3
120
I D (mA)
T j ( C)
MGP038
MGP036
160
10
Rev. 04 - 5 January 2007
4
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
(pF)
DS
GS
C
(A)
I D
240
180
120
= 10 V.
= 0; f = 1 MHz.
12
60
8
4
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
10
5
T j
125 C
10
20
25 C
C is
C os
Product specification
15
30
V GS (V)
V DS (V)
BLF145
MGP037
MGP039
5 of 15
20
40