BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 15

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
Revision history
Revision history
Document ID
BLF145_N_4
Modifications:
BLF145_3
(9397 750 11581)
BLF145_CNV_2
(9397 750 xxxxx)
Release date
20070105
20031013
19971212
•
•
corrections made to note 2 on page 8
corrections made to note 2 on page 10
Data sheet status
Product data sheet
Product specification
Product specification
Rev. 04 - 5 January 2007
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
-
-
-
HF power MOS transistor
Supersedes
BLF145_3
BLF145_CNV_2
-
Document identifier: BLF145_N_4
Date of release: 5 January 2007
BLF145
All rights reserved.
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