BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 9

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in SSB operation in a common source class-AB circuit.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P
single tone under the following conditions:
V
handbook, halfpage
SSB, class-AB
h
DS
OPERATION
HF power MOS transistor
= 25 C; R
MODE OF
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.12 Power gain as a function of load power,
power the values should be decreased by 6 dB.
= 28 V; f = 28 MHz; T
th mb-h
(dB)
G p
22
20
18
16
= 0.3 K/W; f = 28 MHz.
0
typical values.
h
= 25 C.
h
th mb-h
= 70 C.
(MHz)
= 0.3 K/W; R1 = 34 ; unless otherwise specified.
DS
28
20
f
= 28 V; I
h
= 25 C; R
DQ
= 0.25 A;
V
(V)
28
DS
40
th mb-h
P L (W)
0.25
MGP043
I
(A)
DQ
= 0.3 K/W at rated load power.
60
Rev. 04 - 5 January 2007
30 (PEP)
(W)
P
L
handbook, halfpage
typ. 20
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.13 Two tone efficiency as a function of load
(dB)
th mb-h
(%)
G
D
60
40
20
p
0
0
= 0.3 K/W; f = 28 MHz.
power, typical values.
h
= 25 C.
h
= 70 C.
typ. 40
(%)
D
DS
20
= 28 V; I
typ. 35
(dB)
d
DQ
3
(1)
= 0.25 A;
40
Product specification
typ. 40
(dB)
P L (W)
d
5
(1)
BLF145
MGP044
9 of 15
8.9
60
L
= 30 W
( )
Z
L
j1.0