BLF145,112 NXP Semiconductors, BLF145,112 Datasheet - Page 7

• Manufacturer Part Number: BLF145,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF145,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 28MHz
• Gain: 27dB
• Voltage - Rated: 65V
• Current Rating: 6A
• Current - Test: 1.3A
• Voltage - Test: 28V
• Power - Output: 8W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.75 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 68 W
• Maximum Operating Temperature: + 200 C
• Application: HF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 30W
• Power Gain (typ)@vds: 27@28V/20@28VdB
• Frequency (max): 28MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.2(Min)S
• Drain Source Resistance (max): 750@10Vmohm
• Input Capacitance (typ)@vds: 125@28VpF
• Output Capacitance (typ)@vds: 75@28VpF
• Reverse Capacitance (typ): 7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 35%
• Mounting: Screw
• Mode Of Operation: SSB Class-A/SSB Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2395; 933817070112; BLF145; BLF145

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-A OPERATION
T
RF performance in SSB operation in a common source class-A circuit.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
handbook, halfpage
SSB, class-A
h
HF power MOS transistor
= 25 C; R
Class-A operation; V
R
solid line: T
dotted line: T
Fig.9
OPERATION
power the values should be decreased by 6 dB.
th mb-h
MODE OF
(dB)
G p
30
28
26
24
= 0.3 K/W; f = 28 MHz.
0
Power gain as a function of load power;
typical values.
h
= 25 C.
h
th mb-h
= 70 C.
DS
= 0.3 K/W; R1 = 26 ; unless otherwise specified.
= 28 V; I
10
(MHz)
28
f
D
= 1.3 A;
20
V
(V)
P L (W) PEP
28
DS
MGP040
30
Rev. 04 - 5 January 2007
(A)
1.3
I
D
8 (PEP)
(W)
handbook, halfpage
P
L
Class-A operation; V
R
solid line: T
dotted line: T
Fig.10 Third order intermodulation distortion as a
(dB)
th mb-h
d 3
20
30
40
50
60
0
= 0.3 K/W; f = 28 MHz.
function of load power; typical values.
typ. 27
h
(dB)
G
= 25 C.
h
24
= 70 C.
P
DS
= 28 V; I
10
typ. 43
(dB)
d
40
3
D
(1)
= 1.3 A;
20
typ. 70
(dB)
Product specification
P L (W) PEP
d
40
5
(1)
MGP041
BLF145
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Z
L
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