BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet
BLF4G22S-100,112
Specifications of BLF4G22S-100,112
934058168112
BLF4G22S-100
BLF4G22S-100
Related parts for BLF4G22S-100,112
BLF4G22S-100,112 Summary of contents
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... BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table common source class-AB test circuit; I case Mode of operation f 2-carrier W-CDMA [1] 10 MHz carrier spacing PAR ...
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... Philips Semiconductors 1.3 Applications RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range. 2. Pinning information Table 2: Pin BLF4G22-100 (SOT502A BLF4G22S-100 (SOT502B [1] Connected to flange 3. Ordering information Table 3: Type number BLF4G22-100 BLF4G22S-100 4. Limiting values Table 4: In accordance with the Absolute Maximum Rating System (IEC 60134) ...
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... Mode of operation: 2-Carrier W-CDMA, PAR 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH, f Symbol G p IRL D IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch corresponding to VSWR > through all phases under the following conditions 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 Thermal characteristics Parameter ...
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... Table 9: [1] Code [1] 0.2 dB overlap is allowed for measurement reproducibility. [2] For 2-carrier W-CDMA at f 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 40 D (%) G p (dB PAR = 0. CCDF; 3GPP TM1, 64 DPCH. average load power; typical values Typical impedance values = 900 mA (AV) ...
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... P = 135 W (= 52.1 dBm) 1dB 161 W (= 51.3 dBm) 3dB 120 off Fig 4. Pulsed peak power capability; typical values 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 001aac271 20 IMD3 (dBc (W) L(PEP) (1) I (2) I (3) I ( 2140.1 MHz 2 Fig 3. Third order intermodulation distortion as a ...
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See Table 10 for list of components Fig 6. Test circuit for operation at 2.14 GHz C12 V D C11 L14 C8 C9 C10 DUT L2 L3 ...
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The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) ( The other side is unetched and serves as a ground plane. See Table 10 for list of components. ...
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... American Technical Ceramics type 100A or capacitor of same quality. [3] American Technical Ceramics type 180R or capacitor of same quality. [4] Striplines are on a double copper-clad Taconic RF35 PCB ( 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 List of components (see Figure 6 Description tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...
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... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 8. Package outline SOT502A 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 9. Package outline SOT502B 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 scale 19.96 9.50 9.53 1.14 19.94 5 ...
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... Dq LDMOS PAR PEP RF TM1 VSWR W-CDMA 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 Abbreviations Description Third Generation Partnership Project Continuous Wave Complementary Cumulative Distribution Function Dedicated Physical Channels quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak-to-Average Ratio Peak Envelope Power ...
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... Revision history Table 12: Revision history Document ID Release date BLF4G22-100_4G22 20060110 S-100_1 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 Data sheet status Change notice Product data sheet - Rev. 01 — 10 January 2006 UHF power LDMOS transistor Doc. number Supersedes 9397 750 14338 - © ...
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... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14338 Product data sheet BLF4G22-100; BLF4G22S-100 [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. ...
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... Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 13 BLF4G22-100; BLF4G22S-100 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...