BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 6

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

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C1
C12
C13
V
G
V
R1
D
C11
C2
C14
C4
C3
L7
L14
C15
C8 C9
C10
C5
C6
L6
DUT
C7
L1
L10
C16
L11
L13
L2
L3
L12
L4
L5
L8
L9
001aac275
See
Table 10
for list of components
Fig 6. Test circuit for operation at 2.14 GHz