BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 5

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

Philips Semiconductors
9397 750 14338
Product data sheet
Fig 2. Power gain as a function of peak envelope load
Fig 4. Pulsed peak power capability; typical values
(dB)
(1) I
(2) I
(3) I
(4) I
(5) I
(dB)
G
G
p
p
16
14
12
10
16
14
12
10
Two-tone measurement;
V
power; typical values
t
t
Dq
Dq
Dq
Dq
Dq
on
off
1
0
DS
= 8 s
= 1 ms
= 600 mA
= 750 mA
= 900 mA
= 1050 mA
= 1200 mA
= 28 V; f
(1)
(5)
P
P
1dB
3dB
40
= 135 W (= 52.1 dBm)
= 161 W (= 51.3 dBm)
1
(2)
= 2140.0 MHz; f
10
(3)
80
(4)
120
10
2
= 2140.1 MHz
2
P
L(PEP)
160
001aac271
001aac273
P
L
(W)
(W)
Rev. 01 — 10 January 2006
200
10
3
BLF4G22-100; BLF4G22S-100
Fig 3. Third order intermodulation distortion as a
Fig 5. t
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
t
50%
(hr)
10
10
10
10
10
10
20
30
40
50
60
70
11
10
9
8
7
6
100
Two-tone measurement;
V
function of peak envelope power; typical values
function of junction temperature
Dq
Dq
Dq
Dq
Dq
50%
1
DS
= 600 mA
= 750 mA
= 900 mA
= 1050 mA
= 1200 mA
= 28 V; f
failures due to electromigration as a
(2)
140
1
= 2140.0 MHz; f
(5)
10
(4)
(3)
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
180
(1)
10
2
= 2140.1 MHz
2
220
P
L(PEP)
001aac272
001aac274
T
j
( C)
(W)
10
260
3
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