BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 11

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

Philips Semiconductors
10. Abbreviations
9397 750 14338
Product data sheet
Table 11:
Acronym
3GPP
CW
CCDF
DPCH
I
LDMOS
PAR
PEP
RF
TM1
VSWR
W-CDMA
Dq
Abbreviations
Description
Third Generation Partnership Project
Continuous Wave
Complementary Cumulative Distribution Function
Dedicated Physical Channels
quiescent drain current
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average Ratio
Peak Envelope Power
Radio Frequency
Test Model 1
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Rev. 01 — 10 January 2006
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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