BLF4G22S-100,112 NXP Semiconductors, BLF4G22S-100,112 Datasheet - Page 4

• Manufacturer Part Number: BLF4G22S-100,112
• Description: BASESTATION FINAL 2.2GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G22S-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 25W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2399; 934058168112; BLF4G22S-100; BLF4G22S-100

Philips Semiconductors
9397 750 14338
Product data sheet
Table 8:
V
Table 9:
[1]
[2]
Frequency
(MHz)
2110
2140
2170
Code
A
B
C
D
E
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of
DS
= 28 V; I
0.2 dB overlap is allowed for measurement reproducibility.
For 2-carrier W-CDMA at f
(1) 2-carrier W-CDMA performance; V
[1]
PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
average load power; typical values
Typical impedance values
RF gain grouping
Dq
= 900 mA; P
(dB)
(%)
G
Rev. 01 — 10 January 2006
D
p
40
30
20
10
0
1
L
BLF4G22-100; BLF4G22S-100
0
= 2157 MHz, f
= 25 W (AV); T
Z
( )
2.2 + j4.8
2.2 + j4.6
2.2 + j4.5
Gain (dB)
Min
12.5
13.0
13.5
14.0
14.5
S
10
DS
2
= 28 V, I
= 2167.5 MHz.
[2]
20
case
= 25 C.
Dq
= 900 mA; f
30
40
P
001aac270
L(AV)
1
ACPR
UHF power LDMOS transistor
= 2135 MHz and f
IMD3
G
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
D
p
Z
( )
1.5
1.5
1.4
Max
13.0
13.5
14.0
14.5
-
(W)
L
50
15
25
35
45
55
ACPR,
IMD3
(dBc)
j2.6
j2.4
j2.2
2
= 2145 MHz;
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